CASE STUDIES
MRAM pioneer develops 20nm magnetic tunnel
MRAM is being tipped as the prime embedded non-volatile memory option at 28nm MRAM technology developer Spin Trans
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MRAM development gains momentum
MRAM is a promising replacement for SRAM, DRAM and flash that are facing serious scaling challenges as the industry moves to smaller nodes
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Memory IC sales to show strong growth through 2021
IC Insight’s 2017 McClean Report forecasts that revenues for memory products will increase by a 7 3% CAGR to $109 9 billion in 2021
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Flash memory adopts 3b-per-cell TLC tech
Toshiba’s 64-layer device with 3b-per-cell TLC BiCS Flash Device bundles 1TB 3D flash memory capacity and pe
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Crossbar ReRAM chases terabyte non-volatile memory
The ReRAM is showing advantages over flash memory, including read latencies of 20 nanoseconds and write latencies
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Toshiba unveils 1.5TB QLC 3D Flash
Toshiba has claimed the first 1 5TB QLC 3D Flash memory The prototype uses a die with a capacity of 768Gb (96GB) and a 64-layer 3D Flash memory process
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The U.S., China and the Chip Industry
Beijing cried foul over Trump s decision to block the acquisition of Lattice Semiconductor It should be prepared for more of the same
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Synopsys Teams With SMIC, Brite Semi on IoT Platform
Platform based on Synopsys ARC Data Fusion IP subsystem said to simplify design, reduce costs
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