Storage chip giant Samsung

As a leader in the storage industry, Samsung has brought many technology demonstrations at IEDM. Samsung has introduced a 14nm automotive eMRAM technology.
 

Samsung states that this technology has the world's best 10 pJ/bit write energy and high durability with>1E12 cycles. Samsung first enhanced the eFlash type eMRAM technology, which has a durability of 1E6 cycles, achieving sub ppm bit error rates in all fault modes, and reliable read/write operations at temperatures up to 150 ° C.
 

In addition, Samsung has also improved the switching efficiency of MTJ devices, achieving high durability of>1E12 cycles, while supporting automotivegrade-1. Based on this technology, balancing retention time and durability will achieve almost infinite durability. This breakthrough marks an important step towards the widespread adoption of eMRAM in various applications.
 

Samsung demonstrated the successful development of embedded MRAM (eMRAM) for automotive applications compatible with 8nm logical nodes.
 

According to Samsung, the company achieved a yield of 90% on a unit of 0.017 μ m2, which is the smallest known size to date. All functions of write and read operations have been achieved within the temperature range of -40 ° C to 150 ° C, while meeting the reliability standards required for automotive applications.
 

Meanwhile, Samsung has successfully reduced the short-circuit failure rate within the reduced cell spacing to 0.5ppm. These results indicate that Samsung's innovative technology has the potential to expand to 5nm MRAM technology.