After 2000, the growth of DRAM storage capacity is not significant

Before 2000, especially in the 1970s and 1980s, the storage capacity of DRAM increased significantly. There was a saying in the storage semiconductor industry that the new generation DRAM with a fourfold increase in storage capacity would be mass-produced in three years. Although mainstream users have evolved from Main flames in the 1970s to Workstations in the 1980s and PCs in the 1990s, DRAM manufacturers have not let down the tradition of "three years and four times".
 

From the overview of silicon chips published by the International Society of Sciences (ISSCC), the research and development status of DRAM is as follows: initially, it was the maximum storage capacity. In the early 1990s, the rate of capacity improvement far exceeded "three to four times (or even 1.59 times) a year". In 1990, it was 16Mbit, and in 1995 it was 1Gbit, which is "64 times in five years (2.3 times in one year).
 

However, after 1995, the growth in storage capacity was no longer significant. Prior to 1999, it maintained a maximum capacity of 1Gbit. Later, it hovered around 256Mbit and 512Mbit, 1Gbit, 2Gbit, and 4Gbit. But it has not yet entered the new generation of 4Gbit. In 2014 and 2016, 8Gbit silicon chips were announced, which can be said to have finally progressed 1.5 generations from 1Gbit. In fact, the progress rate is "8 times in 20 years" (1.11 times in 1 year), which can be said to be the slowest capacity improvement in DRAM research and development history.