​SK Hynix mass-produces ultra-high-speed DRAM "HBM2E

On July 2, SK Hynix announced the mass production of ultra-high-speed DRAM "HBM2E". It is reported that this is another achievement of SK Hynix only ten months after the announcement of the completion of HBM2E development last August.
 
SK Hynix's press release pointed out that HBM2E is currently the industry's fastest DRAM solution, capable of processing 460GB per second through 1,024 I/Os (Inputs/Outputs) at a processing speed of 3.6Gbps per pin The data is equivalent to being able to transmit 124 full high-definition (FHD) movies (3.7GB each) in one second.
     
In addition, SK Hynix's mass-produced HBM2E can connect eight 16Gb DRAMs vertically with TSV (Through Silicon Via, through-silicon-via technology) technology, and its capacity has reached 16GB, which is more than twice the capacity of the previous generation HBM2.
 
It is understood that HBM2E has ultra-high speed, high capacity, low energy consumption and other characteristics, is suitable for deep learning accelerator (deep learning accelerator), high-performance computers and other new generation artificial intelligence (AI) systems that require high computing power storage solutions. At the same time, HBM2E will be suitable for Exascale supercomputers (computers capable of performing 10 billion calculations in one second) that will dominate the next generation of basic and applied scientific research in climate change, biomedicine, and cosmic exploration.
 
Wu Zhongxun, vice president and chief marketing officer of SK Hynix, said: "SK Hynix has been leading the new generation of technological innovations that contribute to the development of human civilization through the development of the world's first HBM (High Bandwidth Memory) and other achievements. The company will pass this The second batch of HBM2E mass production strengthens its position in the high-end memory market and advocates the fourth industrial revolution.