Samsung to achieve production 10 nanometers DDR4 8 gb of memory

In recent years, the death rumors being spread about Moore's law.Recently, samsung electronics industry in the first paragraph 10 8 gb DDR4 DRAM chips nanoparticles.Korean firms announced at the same time, they have been ahead of the SK 10 nm hynix and light DDR4 chip production.

 

Samsung said at a news conference, the new DRAM support 3200 MBPS data transmission frequency, relative DDR4 DRAM grain performance of 20 nm process by about 20%, at the same time, its power consumption reduced by 10% to 20%, and the characteristics of high efficiency low energy is applicable to a new generation of HPC (high performance computing), the main computer, large-scale enterprise network and server market.

Samsung last year issued for SSD and otherMemory chips10 nm NAND flash memory, but will reduce DRAM to such a small size will be more difficult.The instability of this is because the memory need capacitor with the transistor, which is all of these elements need to be narrowed.In addition, samsung still must "in a few nanometers wide transistors stacked on a very narrow cylindrical capacitor to store charge, thereby creating more than 8 billion units.As a result, production difficulty has been raised several times.

Samsung claims that their use of the existing argon fluoride immersion lithography, so no additional use of extreme ultraviolet equipment, can solve the problem of DRAM extension.Have professional analysts believe that samsung has improved his four heavy graphics, use lithography exposure to increase the resolution of the chip functions, the technology is widely used in the production of the NAND flash memory.And points out that the continuation of Moore's law means we will continue to get cheaper DRAM.

SIMM module, samsung will this year in research and development production capacity from 4 gb laptop to the 128 gb enterprise server, at the same time extend its 20 nanometers DRAM lineup combined with new DRAM products throughout the year.Samsung will launch 10 nm in the future high density superb mobile DRAM products, ultra-high resolution, in order to solve the smartphone market.