Smic successfully produced 40 nm ReRAM memory chips

But in NAND category, on the development and production of Chinese companies than foreign firms are too late for more than 20 years, hope or more on a new generation of storage technology.

Semiconductor manufacturing international (SMIC) have a formal sample ReRAM 40 nm process (nonvolatile resistance variant memory) chip, the more advanced version of 28 nm process also is coming, this new type of memory chip one thousand times faster than NAND flash memory, durable one thousand times.

inMemory chipsField, NAND flash memory is the absolute mainstream, conservative about five years it will be the mainstream of electronic equipment storage chip selection, but researchers have began to explore research and development of a new generation of nonvolatile memory chips, Intel, meguiar's research and development of 3 d before XPoint is based on PCM phase change storage, is also the category of a new generation of memory chips, today said ReRAM (nonvolatile resistance change storage) is more representative of the nonvolatile memory.

Although the name of RAM, but ReRAM actually more like a NAND flash memory used for data storage, but its performance is stronger, more than 40 times the DRAM memory density, read 100 times faster, write 1000 times faster, 1000 times the durability, single chip () around 200 was terabytes of storage can be realized, also has the advantages of simple structure, easy to manufacture.

Mention ReRAM, must carry a company is the Crossbar, according to the company data, Crossbar technology by was born in China's first Lu Wei (Dr. Wei d. Lu) Dr Research and development, he is also the chief scientist at the Crossbar and co-founder.Dr Lu has a bachelor's degree in physics, tsinghua university, China and a doctorate in physics from rice university in Texas.Dr Lu has twelve years of research experience in the field of ReRAM, he first as a postdoctoral fellow at Harvard University and then was appointed professor at the university of Michigan is involved in the study.He is nano structure and equipment industry's leading experts, including switchgear based on double end resistance of high density memory and logic system, neuronal circuits, semiconductor nanowires devices and electron transport in the low dimensional system.

In 2016 the company received $80 million in venture capital, Chinese companies are involved in, at the same time Crossbar in March last year, announced a foray into the Chinese market, their partner is SMIC SMIC, 40 nm CMOS trial-produce ReRAM chips will be based on the latter.According to the company's vice President of Sylvain Dubois said, smic's 2016 years has begun to give customer samples ReRAM chip of 40 nm process, implement the 2016 years before the company launched ReRAM plan.

28 nm process not only that, the more advanced version of ReRAM chips will also appeared in the first half of 2017, just Sylvain Dubois declined to say whether or manufactured by the companies, or to other foundries.

Key words：sram