Nonvolatile memory is a good opportunity
In recent years the Internet development in full swing, the boom will push memory requirements.Cars, mobile device, industrial device such as a machine to machine (M2M) several years of rising demand for solid-state drives, combined with embedded system with large data, also to the requirement of memory capacity doubled growth, the rise of these applications will lead to all sorts of embedded memory shipments surged.But the mass data storage as the main carrier of the Internet of things to memory low cost, high capacity, low power consumption, high speed, high reliability requirements.Research and development, looking for a kind of most conforms to the requirements, the most competitive and the development potential of non-volatile memory, the time is short and is of great significance.
Magnetic variation memory (MRAM) started to develop since the 1990 s, is a kind of non-volatile memory technology, that is, when the power is stored by the storage of data is not lost.The technology on the theory of access speed is close to an SRAM, and non-volatile flash storage characteristics, on the density of capacity and service life of almost the same DRAM, the average energy consumption is far lower than the DRAM, the future extremely has the potential to become truly universal memory.But as a result of MRAM use a lot of new material, new structure, production difficulty is very big.Phase change memory (PRAM) can save the data when chip power outage, and common flash at the same working principle.But the PRAM write data of 30 times faster than flash memory, its life cycle will also be increased by at least ten times.
Phase change memory is based on the material phase change memory of the change of the resistance.Structure has a resistance heater and phase transition layer.Access to RESET (RESET), after writing the current resistance heater makes the phase transformation temperature rise rapidly, after reaching phase transition layer within a short time after melting point, shut down current, make the material fast cooling, fixed in the amorphous, as the high impedance state.In order to make the back in crystalline phase transition layer material, need to pass into the SET (SET) current, phase transition layer needs to be heated to crystallization temperature and melting temperature, makes the fast growth of crystal nucleus and microcrystalline.The phase change material research focused on the GST is alloy.Because of its high reset write current, the phase change memory power consumption is higher, for a long time, in addition to write current write slower.Looking for a new type of phase change materials to reduce current, speed up the writing and at the same time reduce the thermal disturbance become urgently needs to solve the problem.
In the market and is driven by the pressing needs of the market are also appeared some new type of nonvolatile memory, such as phase change memory (PRAM), ferroelectric memory (FRAM) and resistance changing memory (RRAM), magnetic memory (MRAM).
Magnetic variation memory (MRAM) started to develop since the 1990 s, is a kind of non-volatile memory technology, that is, when the power is stored by the storage of data is not lost.The technology on the theory of access speed is close to an SRAM, and non-volatile flash storage characteristics, on the density of capacity and service life of almost the same DRAM, the average energy consumption is far lower than the DRAM, the future extremely has the potential to become truly universal memory.But as a result of MRAM use a lot of new material, new structure, production difficulty is very big.Phase change memory (PRAM) can save the data when chip power outage, and common flash at the same working principle.But the PRAM write data of 30 times faster than flash memory, its life cycle will also be increased by at least ten times.
Phase change memory is based on the material phase change memory of the change of the resistance.Structure has a resistance heater and phase transition layer.Access to RESET (RESET), after writing the current resistance heater makes the phase transformation temperature rise rapidly, after reaching phase transition layer within a short time after melting point, shut down current, make the material fast cooling, fixed in the amorphous, as the high impedance state.In order to make the back in crystalline phase transition layer material, need to pass into the SET (SET) current, phase transition layer needs to be heated to crystallization temperature and melting temperature, makes the fast growth of crystal nucleus and microcrystalline.The phase change material research focused on the GST is alloy.Because of its high reset write current, the phase change memory power consumption is higher, for a long time, in addition to write current write slower.Looking for a new type of phase change materials to reduce current, speed up the writing and at the same time reduce the thermal disturbance become urgently needs to solve the problem.
This paper keywords:memory
CONTACT US
USA
Vilsion Technology Inc.
36S 18th AVE Suite A,Brington,Colorado 80601,
United States
E-mail：sales@vilsion.com
Europe
Memeler Strasse 30 Haan,D 42781Germany
E-mail：sales@vilsion.com
Middle Eastern
Zarchin 10St.Raanana,43662 Israel
Zarchin 10St.Raanana,43662 Israel
E-mail：peter@vilsion.com
African
65 Oude Kaap, Estates Cnr, Elm & Poplar Streets
Dowerglen,1609 South Africa
E-mail：amy@vilsion.com
Asian
583 Orchard Road, #19-01 Forum,Singapore,
238884 Singapore
238884 Singapore
E-mail：steven@vilsion.com