Semiconductor giant developing eMRAM memory
In addition to the high speed computing and data center storage requirements, non-volatile memory, the Internet of things need instant information storage requirements, involving the Internet of things need data high durability, low energy consumption, every time to write or the information storage unit small, etc.
Global semiconductor giants are keen competition in the market for the next generation of new memory, it may fully change semiconductor market prospects for development, and become one of the first business of semiconductor foundry in the future.
Although the magnetic variation memory (MRAM) in the previous technology node shows the non-volatile, high reliability and manufacturability, magnetic memory for the long term view is a popular technology in the future.But in a miniature to 2 x nodes and compatible embedded memory after the period of process temperature (BEOL) began to face challenges.
Resistance changing memory (RRAM) and magnetic memory (MRAM) have similar function, both are after a period of calibration of memory, so you can more easy to implement in a logical process.RRAM stack is more simple, because needs less material between the electrodes.And it does not need like MRAM equipment investment.
Although the resistance changing memory and phase change memory and other types of memory also has its supporters, but the memory are the miniature problem exists, 28 nmcmos to meet the process requirements.
Samsung electronics is developing vigorously MRAM memory, and other semiconductor giant Intel is storm PRAM type memory containing 3 dxpoint technology.TSMC now has production of MRAM and resistance changing memory (RRAM), and other new technology and capability of memory.
Embedded memory is very important role in the semiconductor chip, it provides the whole chip can interoperability features determines the efficiency of the whole chip, speed and performance.Only reliable design method to design a good memory.
Samsung electronics is currently developing eMRAM memory, samsung's 28 NMFD - SOI (FullyDepletedSilicononInsulator) process has eMRAM options, including eMRAM risk production for 2018;18 nm FD - SOI process and the risk of production will be started in 2020, also has the option of a eMRAM.Europe's largest semiconductor manufacturers - grace wisdom pu eMRAM memory semiconductor has decided to use samsung, with applications in the Internet of things device.
TSMC release in the second half of 2018 from 28 nm eMRAM process in production.And GlobalFoundries is released, the plan in 2017 in 22 NMFD - SOI process provides eMRAM, into production in 2018.
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