SRAM will disappear?
After decades of development and progress, the electronics industry almost formed a linear system, and by Moore's Law (Moore 's Law).However, as Moore's law has gradually become loose, many new technologies gradually began to float on the table.The technology is not only technical improvement, but full of change.Electronics industry can be the opportunity to take advantage of these new technologies into nonlinear systems, overthrow principle established by electronic industry for many years.
Semiconductor Engineering site reports that in recent years, the rapid development of storage technology, may therefore change the storage and processing technology in the relationship has been established in the early 1940 s.The efficiency of continuous memory configuration despite continuing challenges and questions over the years, but the system inertia makes this configuration to remain unchanged for decades.
Even in a symmetric multiprocessing system, the configuration of the memory most or continuous space, data from memory to the processor, often card will be in the position of the data bus, because the storage and processing components distance are too far apart.In fact, the speed of processing and storage in the architecture and power distribution gap is more and more big, the data transmission speed and influence the chip.
So Rambus DDR interface structure of analogy is used to change the memory and logic links, accelerate information transmission and the message back to logic, but it must be based on the memory and logic for the premise of two independent units.As long as the storage on the above logic, it can use millions of lines connected to the memory and logic, changing the original structure.
The distance of the die structure more and more get attention.A mediation layer between traditional chip (Intel - chip interposer), the lineup of the stack, and Silicon perforation (Through Silicon Via;TSV) connection, has gradually become the mainstream.All kinds of MEMS, RF, memory, logic, such as technology, also can integrate more cost effective way.
But 3 d memory is not only a stack chips.3 d storage architecture can deal with multi-layer materials.Samsung Electronics, Samsung Electronics and Toshiba (Toshiba), all the way from 24 memory speedily development to 48 layers.However, this does not mean that the silicon perforation completely lost value.Silicon perforation still can effectively reduce I/O power, provide higher storage density.
3 d stack architecture, hard to avoid can produce power and heat is also a good memory is not too high power demand, only consumes electric power in reading and writing.
SRAM and DRAM for a long time before the termination of the development of the miniature and ReRAM, spin (spin torque), phase transformation, phase change, intersection point (cross) and new storage technologies such as rendering.These new technologies in common, it is the breakthrough of material science and physics.
But the problem of the communication delay between memory and processor, has been plagued electronics industry more than 30 years, is not able to completely solve the new technology, shorten the gap between only at most.
In addition, the storage technology to take off the hook, and transistors can be after the period of process (BEOL) storage, coding and the induction amplifier can be placed in the memory array, compared with SRAM can save a lot of space.The future the system of single chip (SoC), may no longer need to use an SRAM.
This paper keywords:SRAM
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